Devices for Integrated Circuits
Silicon and III-V Compound Semiconductors
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Release Date: 18/12/1998
Silicon and III-V Compound Semiconductors This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs).